Anomalous luminescence behavior in the InAlGaN thin film
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials
Reference19 articles.
1. Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors
2. Quaternary InAlGaN-based high-efficiency ultraviolet light-emitting diodes
3. Molecular-beam epitaxial growth and characterization of quaternary III–nitride compounds
4. Mechanism of enhanced luminescence in InxAlyGa1−x−yN quaternary alloys
5. Photoluminescence enhancement in quaternary III-nitrides alloys grown by molecular beam epitaxy with increasing Al content
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1. Photoluminescence of localized excitons in ZnCdO thin films grown by molecular beam epitaxy;Solid State Communications;2016-07
2. Crack-free Si-doped n-AlGaN film grown on sapphire substrate with high-temperature AlN interlayer;Optik;2015-12
3. Alteration of structural and optical properties in quaternary Al0.1In0.1Ga0.8N films using ultraviolet assisted photo-electrochemical etching route;Journal of Alloys and Compounds;2015-11
4. Effects of magnesium contents in ZnMgO ternary alloys grown by molecular beam epitaxy;Journal of Alloys and Compounds;2015-07
5. Characterization of temperature-dependent photoluminescence properties of InAlGaN quaternary alloys;Journal of Alloys and Compounds;2014-02
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