Quaternary InAlGaN-based multi-quantum wells for ultraviolet light emitting diodes grown by metalorganic chemical vapor deposition
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference17 articles.
1. S. Nakamura, G. Fasol. The Blue Laser Diode, 1st Edition, Springer-Verlag, Heidelberg, 1997.
2. Phosphor-Conversion White Light Emitting Diode Using InGaN Near-Ultraviolet Chip
3. Monte Carlo Simulation on Properties of a Novel Flat-Panel Fluorescent Display Excited by GaN Micro-Ultraviolet-Light-Emitting Diodes
4. Room-temperature intense 320 nm band ultraviolet emission from quaternary InAlGaN-based multiple-quantum wells
5. Ultraviolet InGaN and GaN Single-Quantum-Well-Structure Light-Emitting Diodes Grown on Epitaxially Laterally Overgrown GaN Substrates
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