Structural and optical properties of Si-doped Al0.08In0.08Ga0.84N thin films grown on different substrates for optoelectronic devices-Reference-Cited by-同舟云学术

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Structural and optical properties of Si-doped Al0.08In0.08Ga0.84N thin films grown on different substrates for optoelectronic devices

Published:2016-07 Issue: Volume:95 Page:95-107
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Ghazai Alaa Jabbar,Hassan Haslan Abu,Hassan Zanuri Bint

Funder

University Science Malaysia USM

Thi-Qar and Al-Nahrain University

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference65 articles.

1. Structural and optical properties of quaternary AlInGaN epilayers grown by MOCVD with various TMGa flows;Liu;J. Cryst. Growth,2004

2. Optical properties in p-type doping of nitrides quaternary alloys multiple quantum wells;d'Eurydice;Microelectron. J.,2005

3. Characterisation of quaternary AlInGaN thick layers and quantum wells grown by MOVPE;Perez-Solorzano;J. Cryst. Growth,2004

4. High optical quality AlInGaN by metalorganic chemical vapor deposition;Aumer;Appl. Phys. Lett.,1999

5. Characteristics of ultraviolet laser diodes composed of quaternary AlInGaN;Nagahama;Jpn. J. Appl. Phys.,2001

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optoelectronic investigations of ZnGeAs2: A first principle TB-mBJ approximation;DAE SOLID STATE PHYSICS SYMPOSIUM 2019;2020

2. Stereometric Analysis of Pt Schottky Contacts on Quaternary n-Al0.08In0.08Ga0.84N Thin Film;The 30th SIAR International Congress of Automotive and Transport Engineering;2019-10-14

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