Stereometric Analysis of Pt Schottky Contacts on Quaternary n-Al0.08In0.08Ga0.84N Thin Film-Reference-Cited by-同舟云学术

Stereometric Analysis of Pt Schottky Contacts on Quaternary n-Al0.08In0.08Ga0.84N Thin Film

Published:2019-10-14 Issue: Volume: Page:660-669
ISSN:
Container-title:The 30th SIAR International Congress of Automotive and Transport Engineering
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Author:

Ţălu Ştefan,Ţălu Mihai,Vintilă Daniela,Grigorie Laura Diana,Romanescu Alina

Publisher

Springer International Publishing

Link

http://link.springer.com/content/pdf/10.1007/978-3-030-32564-0_77

Reference27 articles.

1. Ghazai, A.J., Thahab, S.M., Abu Hassan, H., Hassan, Z.: A study of the operating parameters and barrier thickness of Al0.08In0.08Ga0.84N/AlxInyGa1−x−y N double quantum well laser diodes. Sci. China Technol. Sci. 54(1), 47–51 (2011)

2. Ghazai, A.J., Thahab, S.M., Abu Hassan, H., Hassan, Z.: Quaternary ultraviolet AlInGaN MQW laser diode performance using quaternary AlInGaN electron blocking layer. Opt. Express 19(10), 9245–9254 (2011). https://doi.org/10.1364/oe.19.009245

3. Ghazai, A.J., Aziz, W.J., Abu Hassan, H., Hassan, Z.: Quaternary n-Al0.08In0.08Ga0.84N/p-Si-based solar cell. Superlattices Microstruct. 51(4), 480–485 (2012). https://doi.org/10.1016/j.spmi.2012.01.011

4. Ghazai, A.J., Abu Hassan, H., Hassan, Z.B.: Structural and optical properties of Si-doped Al0.08In0.08Ga0.84N thin films grown on different substrates for optoelectronic devices. Superlattices Microstruct. 95, 95–107 (2016)

5. Rajagopal, V., Ravinandan, M., Koteswara, P., Choi, C.J.: Effects of thermal annealing on the electrical and structural properties of Pt/Mo Schottky contacts on n-type GaN. J. Mater. Sci.: Mater. Electron. 20(10), 1018–1025 (2009)