Quaternary ultraviolet AlInGaN MQW laser diode performance using quaternary AlInGaN electron blocking layer
Author:
Publisher
The Optical Society
Subject
Atomic and Molecular Physics, and Optics
Reference12 articles.
1. Effects of built-in polarization and carrier overflow on InGaN quantum-well lasers with AlGaN or AlInGaN electronic blocking layers
2. InGaN-based ultraviolet emitting heterostructures with quaternary AlInGaN barriers
3. 100-mW kink-free blue-violet laser diodes with low aspect ratio
4. Effects of Built-In Polarization and Carrier Overflow on InGaN Quantum-Well Lasers With Electronic Blocking Layers
5. Effects of built-in polarization on InGaN-GaN vertical-cavity surface-emitting lasers
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