Effects of Built-In Polarization and Carrier Overflow on InGaN Quantum-Well Lasers With Electronic Blocking Layers-Reference-Cited by-同舟云学术

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Effects of Built-In Polarization and Carrier Overflow on InGaN Quantum-Well Lasers With Electronic Blocking Layers

Published:2008 Issue:3 Volume:26 Page:329-337
ISSN:0733-8724
Container-title:Journal of Lightwave Technology
language:
Short-container-title:J. Lightwave Technol.

Author:

Chen Jun-Rong,Lee Chung-Hsien,Ko Tsung-Shine,Chang Yi-An,Lu Tien-Chang,Kuo Hao-Chung,Kuo Yen-Kuang,Wang Shing-Chung

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Atomic and Molecular Physics, and Optics

Link

http://xplorestaging.ieee.org/ielx5/50/4451242/04451245.pdf?arnumber=4451245

Cited by 58 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Performance enhancement of an AlGaN-based deep-ultraviolet laser diode using a two-stepped doped lower waveguide;Journal of Optical Technology;2023-02-01

2. AlGaN-Based Deep UV Laser Diodes without an Electron Blocking Layer and with a Reduced Aluminum Composition of Quantum Barriers;Journal of Russian Laser Research;2022-11

3. Effects of the Stepped-Doped Lower Waveguide and a Doped p-Cladding Layer on AlGaN-Based Deep-Ultraviolet Laser Diodes;Journal of Russian Laser Research;2022-05

4. Composition-graded quantum barriers improve performance in InGaN-based laser diodes;Semiconductor Science and Technology;2021-09-24

5. Improved performance characteristics of violet InGaN MQW LDs through asymmetric W-shaped quantum wells;Physica E: Low-dimensional Systems and Nanostructures;2021-03

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