Characterisation of quaternary AlInGaN thick layers and quantum wells grown by MOVPE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
1. Structural and optical properties of quaternary AlInGaN epilayers grown by MOCVD with various TMGa flows
2. High-temperature-grown quaternary AlInGaN epilayers and multiple quantum wells for ultraviolet emission
3. Optically pumped ultraviolet AlGaInN quantum well laser at 340 nm wavelength
4. Growth and characterization of high-quality quaternary AlInGaN epilayers on sapphire
5. Structural and Optical Properties of AlGaInN/GaN Grown by MOVPE
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1. Effect of gamma irradiation on AlInGaN/AlN/GaN heterostructures grown by MOCVD;Superlattices and Microstructures;2018-08
2. Structural and optical properties of Si-doped Al0.08In0.08Ga0.84N thin films grown on different substrates for optoelectronic devices;Superlattices and Microstructures;2016-07
3. Morphology, growth mode and indium incorporation of MOVPE grown InGaN and AlInGaN: A comparison;Journal of Crystal Growth;2014-07
4. MOVPE grown quaternary AlInGaN layers for polarization matched quantum wells and efficient active regions;physica status solidi (c);2011-05-09
5. Quaternary AlxInyGa1−x−yN layers deposited by pulsed metal-organic vapor-phase epitaxy for high efficiency light emission;Journal of Crystal Growth;2011-01
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