Structural and Optical Properties of AlGaInN/GaN Grown by MOVPE
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/42/i=4S/a=2300/pdf
Cited by 16 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Influence of InN and AlN concentration on the compositional inhomogeneity and formation of InN-rich regions in InxAlyGa1−x−yN;Japanese Journal of Applied Physics;2019-05-14
2. Structural and optical properties of Si-doped Al0.08In0.08Ga0.84N thin films grown on different substrates for optoelectronic devices;Superlattices and Microstructures;2016-07
3. Cation-Mutation Design of Quaternary Nitride Semiconductors Lattice-Matched to GaN;Chemistry of Materials;2015-11-11
4. Morphology, growth mode and indium incorporation of MOVPE grown InGaN and AlInGaN: A comparison;Journal of Crystal Growth;2014-07
5. Relaxation and critical strain for maximum In incorporation in AlInGaN on GaN grown by metal organic vapour phase epitaxy;Journal of Applied Physics;2012-11
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