Quaternary AlxInyGa1−x−yN layers deposited by pulsed metal-organic vapor-phase epitaxy for high efficiency light emission
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference17 articles.
1. Quaternary InAlGaN-based high-efficiency ultraviolet light-emitting diodes
2. Growth and characterization of high-quality quaternary AlInGaN epilayers on sapphire
3. Structural and Optical Properties of AlGaInN/GaN Grown by MOVPE
4. Mechanism of enhanced luminescence in InxAlyGa1−x−yN quaternary epilayers
5. Calculation of unstable mixing region in wurtzite In1−x−yGaxAlyN
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1. Elastic, electronic, optical and thermodynamic properties of Ba3Ca2Si2N6 semiconductor: First-principles predictions;Physica B: Condensed Matter;2020-07
2. Influence of InN and AlN concentration on the compositional inhomogeneity and formation of InN-rich regions in InxAlyGa1−x−yN;Japanese Journal of Applied Physics;2019-05-14
3. Indium incorporation in quaternary In x Al y Ga1−x−y N for UVB-LEDs;Japanese Journal of Applied Physics;2019-04-16
4. Structural and optical properties of Si-doped Al0.08In0.08Ga0.84N thin films grown on different substrates for optoelectronic devices;Superlattices and Microstructures;2016-07
5. Structural, elastic and thermodynamic properties of tetragonal and orthorhombic polymorphs of Sr2GeN2: an ab initio investigation;High Pressure Research;2016-04-02
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