Calculation of unstable mixing region in wurtzite In1−x−yGaxAlyN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.119440
Reference12 articles.
1. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
2. GaN Growth Using GaN Buffer Layer
3. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
4. Doping of GaN with Si and properties of blue m/i/n/n+ GaN LED with Si-doped n+-layer by MOVPE
Cited by 172 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Growth and characterization of Mg-doped GaN and InGaN nanopillar-crystals based on steering-crystal-formed multi-crystalline Si substrates;Japanese Journal of Applied Physics;2023-12-15
2. Effects of growth temperature on structural and electrical properties of in-rich InAlN–GaN heterostructures by radio-frequency metal–organic molecular beam epitaxy;Surface Topography: Metrology and Properties;2023-04-27
3. Bandgap and refractive index estimates of InAlN and related nitrides across their full composition ranges;Scientific Reports;2020-10-01
4. Band offsets of Al x Ga1−x N alloys using first-principles calculations;Journal of Physics: Condensed Matter;2020-06-18
5. On the thermal stability of nearly lattice-matched AlInN films grown on GaN via MOVPE;Journal of Crystal Growth;2020-03
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3