Bandgap and refractive index estimates of InAlN and related nitrides across their full composition ranges

Author:

Alam Shahab N.,Zubialevich Vitaly Z.,Ghafary Bijan,Parbrook Peter J.

Abstract

AbstractIII-Nitride bandgap and refractive index data are of direct relevance for the design of (In, Ga, Al)N-based photonic and electronic devices. The bandgaps and bandgap bowing parameters of III-nitrides across the full composition range are reviewed with a special emphasis on InxAl1−xN, where less consensus was reached in the literature previously. Considering the available InAlN data, including those recently reported for low indium contents, empirical formulae for InAlN bandgap and bandgap bowing parameter are proposed. Applying the generalised bandgap data, the refractive index dispersion data available in the literature for III-N alloys is fitted using the Adachi model. For this purpose, a formalism involving a parabolic dependence of the Adachi parameters on the dimensionless bandgap $${\xi }_{{E}_{\mathrm{g}}}=\left({E}_{\mathrm{g}, {\mathrm{A}}_{x}{\mathrm{B}}_{1-x}\mathrm{N}}-{E}_{\mathrm{g},\mathrm{ BN}}\right)/\left({E}_{\mathrm{g}, \mathrm{AN}}-{E}_{\mathrm{g},\mathrm{ BN}}\right)$$ ξ E g = E g , A x B 1 - x N - E g , BN / E g , AN - E g , BN of the corresponding ternary alloys is used rather than one directly invoking the alloy composition.

Funder

Iranian Ministry of Science, Research and Technology

Science Foundation Ireland

Higher Education Authority

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

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