Growth and characterization of high-quality quaternary AlInGaN epilayers on sapphire
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference19 articles.
1. High optical quality AlInGaN by metalorganic chemical vapor deposition
2. Characteristics of Ultraviolet Laser Diodes Composed of Quaternary AlxInyGa(1-x-y)N
3. Study of GaN-based Laser Diodes in Near Ultraviolet Region
4. 1 mW AlInGaN-based ultraviolet light-emitting diode with an emission wavelength of 348 nm grown on sapphire substrate
5. Top-emission ultraviolet light-emitting diodes with peak emission at 280 nm
Cited by 32 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. 9 mV/V ultra-low DIBL of suppressing SCEs in InAlN/GaN HEMT with lattice-matched InxAlyGa(1-x-y)N back-barrier for RF device;Microelectronics Journal;2023-07
2. Effect of In composition on electrical performance of AlInGaN/GaN-based metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) on Si;Journal of Applied Physics;2019-06-14
3. Trap state characterization of Al2O3/AlInGaN/GaN metal-insulator-semiconductor heterostructures;Semiconductor Science and Technology;2019-04-10
4. Growth of quaternary InAlGaN barrier with ultrathin thickness for HEMT application;Superlattices and Microstructures;2018-06
5. Temperature-dependent inhomogeneous optical behavior of AlInGaN quaternary alloys;Journal of Optical Technology;2018-01-01
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3