High-temperature-grown quaternary AlInGaN epilayers and multiple quantum wells for ultraviolet emission
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference20 articles.
1. Lattice and energy band engineering in AlInGaN/GaN heterostructures
2. Marked enhancement of 320–360 nm ultraviolet emission in quaternary InxAlyGa1−x−yN with In-segregation effect
3. Characteristics of Ultraviolet Laser Diodes Composed of Quaternary AlxInyGa(1-x-y)N
4. Study of GaN-based Laser Diodes in Near Ultraviolet Region
5. Top-emission ultraviolet light-emitting diodes with peak emission at 280 nm
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1. Numerical study on photoelectric properties of semi-polar 101̄1 green InGaN light-emitting diodes with quaternary AlInGaN quantum barriers;AIP Advances;2022-02-01
2. Current transport mechanisms in Pt/Au Schottky contacts to AlInGaN using AlGaN/InGaN short-period superlattices;Applied Physics A;2017-04-12
3. Structural and optical properties of Si-doped Al0.08In0.08Ga0.84N thin films grown on different substrates for optoelectronic devices;Superlattices and Microstructures;2016-07
4. Enhanced carrier localization in near-ultraviolet multiple quantum wells using quaternary AlInGaN as the well layers;RSC Advances;2015
5. Growth and characterization of quaternary AlInGaN multiple quantum wells with different aluminum composition;Applied Surface Science;2014-05
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