Marked enhancement of 320–360 nm ultraviolet emission in quaternary InxAlyGa1−x−yN with In-segregation effect-Reference-Cited by-同舟云学术

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Marked enhancement of 320–360 nm ultraviolet emission in quaternary InxAlyGa1−x−yN with In-segregation effect

Published:2002-01-14 Issue:2 Volume:80 Page:207-209
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Hirayama Hideki,Kinoshita Atsuhiro,Yamabi Takayoshi,Enomoto Yasushi,Hirata Akira,Araki Tsutomu,Nanishi Yasushi,Aoyagi Yoshinobu

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1433162

Reference9 articles.

1. High-Power, Long-Lifetime InGaN Multi-Quantum-Well-Structure Laser Diodes

2. Room-temperature operation at 333 nm of Al0.03Ga0.97N/Al0.25Ga0.75N quantum-well light-emitting diodes with Mg-doped superlattice layers

3. 230 to 250 nm Intense Emission from AlN/AlGaN Quantum Wells

4. Milliwatt operation of AlGaN-based single-quantum-well light emitting diode in the ultraviolet region

5. AlGaN/GaN quantum well ultraviolet light emitting diodes

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2. Epitaxial growth of 2.5-μm quaternary AlInGaN for n-cladding layer in GaN-based green laser diodes;Fundamental Research;2021-11

3. Epitaxial growth of semi-polar (11–22) plane AlInGaN quaternary alloys on m-plane (10-10) sapphire substrates;Materials Science in Semiconductor Processing;2021-05

4. Nanophotonic crystals on unpolished sapphire substrates for deep-UV light-emitting diodes;Scientific Reports;2021-03-02

5. Light‐Emitting Diodes;Nitride Semiconductor Technology;2020-08-03

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