Enhanced carrier localization in near-ultraviolet multiple quantum wells using quaternary AlInGaN as the well layers-Reference-Cited by-同舟云学术

Enhanced carrier localization in near-ultraviolet multiple quantum wells using quaternary AlInGaN as the well layers

Author:

Liu Tong¹²³⁴,Jiao Shujie¹²³⁴⁵,Liang Hongwei⁶⁷⁸⁴,Yang Tianpeng⁹¹⁰⁴,Wang Dongbo¹²³⁴,Zhao Liancheng¹²³⁴

Affiliation:

1. School of Materials Science and Engineering

2. Harbin Institute of Technology

3. Harbin 150001

4. China

5. Key Laboratory for Photonic and Electric Band gap Materials

6. School of Physics and Optoelectronic Engineering

7. Dalian University of Technology

8. Dalian 116024

9. EpiTop Optoelectronic Co., Ltd.

10. Pingxiang 337000

Abstract

Enhanced carrier localization in near-ultraviolet multiple quantum wells using quaternary AlInGaN as the well layers.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

Reference25 articles.

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