Lattice and energy band engineering in AlInGaN/GaN heterostructures-Reference-Cited by-同舟云学术

Lattice and energy band engineering in AlInGaN/GaN heterostructures

Published:2000-02-28 Issue:9 Volume:76 Page:1161-1163
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Khan M. Asif,Yang J. W.,Simin G.,Gaska R.,Shur M. S.,zur Loye Hans-Conrad,Tamulaitis G.,Zukauskas A.,Smith David J.,Chandrasekhar D.,Bicknell-Tassius R.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.125970

Reference11 articles.

1. High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates

2. Short-channel Al0.5Ga0.5N/GaN MODFETs with power density > 3 W/mm at 18 GHz

3. High-temperature performance of AlGaN/GaN HFETs on SiC substrates

4. AlGaN/GaN high electron mobility field effect transistors with low 1/f noise

5. Electron mobility in modulation-doped AlGaN–GaN heterostructures

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