Electron mobility in modulation-doped AlGaN–GaN heterostructures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.123001
Reference9 articles.
1. High-power 10-GHz operation of AlGaN HFET's on insulating SiC
2. High-temperature performance of AlGaN/GaN HFETs on SiC substrates
3. Electron transport in AlGaN–GaN heterostructures grown on 6H–SiC substrates
4. Self-heating in high-power AlGaN-GaN HFETs
5. Piezoeffect and gate current in AlGaN/GaN high electron mobility transistors
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