Shottky Barrier Diodes on AlN Free-Standing Substrates
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference6 articles.
1. Fabrication and performance of GaN electronic devices
2. Temperature dependence and current transport mechanisms in AlxGa1−xN Schottky rectifiers
3. Large-area AlN substrates for electronic applications: An industrial perspective
4. Improved performance of Schottky diodes on pendeoepitaxial gallium nitride
5. Temperature behavior of inhomogeneous Pt∕GaN Schottky contacts
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2. Over 600 V Lateral AlN-on-AlN Schottky Barrier Diodes with Ultra-Low Ideality Factor;Applied Physics Express;2024-07-01
3. Effect of Air Layer Thickness on AlN Crystal Growth by the PVT Method;Crystal Growth & Design;2024-05-15
4. Demonstration of AlGaN-on-AlN p-n Diodes With Dopant-Free Distributed Polarization Doping;IEEE Transactions on Electron Devices;2024-05
5. Semipolar (11–22) AlN Films Grown by Hydride Vapor Phase Epitaxy for Schottky Barrier Diodes;Crystal Growth & Design;2024-04-19
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