Large-area AlN substrates for electronic applications: An industrial perspective-Reference-Cited by-同舟云学术

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Large-area AlN substrates for electronic applications: An industrial perspective

Published:2008-08 Issue:17 Volume:310 Page:4020-4026
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Bondokov Robert T.,Mueller Stephan G.,Morgan Kenneth E.,Slack Glen A.,Schujman Sandra,Wood Mark C.,Smart Joseph A.,Schowalter Leo J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference26 articles.

1. Growth of high purity AlN crystals

2. Ain single crystals

3. Similarities and differences in sublimation growth of SiC and AlN

4. Seeded growth of AlN single crystals by physical vapor transport

5. Growth of bulk aluminum nitride crystals

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1. Effect of the AlGaN Multi‐Quantum Well Growth Temperature on the Efficiency of Metal‐Organic Vapor‐Phase Epitaxy‐Grown Far‐Ultraviolet‐C Light‐Emitting Diodes Emitting near 235 nm;physica status solidi (a);2024-08-12

2. Surface Control of AlN Single Crystal Growth on SiC Substrate;Crystal Growth & Design;2024-05-22

3. Crystal orientation control of a-plane AlN films on r-plane sapphire fabricated by sputtering and high-temperature annealing;Journal of Applied Physics;2024-05-15

4. Demonstration of AlGaN-on-AlN p-n Diodes With Dopant-Free Distributed Polarization Doping;IEEE Transactions on Electron Devices;2024-05

5. Effect of Polarization‐Charge Modulation on the Carrier‐Injection Efficiency of AlGaN‐Based Ultraviolet‐B Laser Diodes Using Polarization Doping in the p‐Type AlGaN Cladding Layer;physica status solidi (a);2024-03-25

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