Surface Control of AlN Single Crystal Growth on SiC Substrate-Reference-Cited by-同舟云学术

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Surface Control of AlN Single Crystal Growth on SiC Substrate

Published:2024-05-22 Issue:11 Volume:24 Page:4801-4809
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Chen Jiahao¹^ORCID,Zhao Qiyue²,Zhang Huangshu¹,Wang Zeren¹,Yang Hao¹,Wu Jiejun¹³,Yu Tongjun¹³

Affiliation:

1. State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China

2. NAURA Technology Group Co., Ltd., Beijing 100176, China

3. Yangtze Delta Institute of Optoelectronics, Peking University, Beijing 100871, China

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.4c00444

Reference40 articles.

1. Review—Status and Challenges in Hetero-epitaxial Growth Approach for Large Diameter AlN Single Crystalline Substrates

2. Smart Power Devices and ICs Using GaAs and Wide and Extreme Bandgap Semiconductors

3. Lattice parameters of AlN bulk, homoepitaxial and heteroepitaxial material

4. Mechanical, Thermodynamic and Electronic Properties of Wurtzite and Zinc-Blende GaN Crystals

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