Temperature behavior of inhomogeneous Pt∕GaN Schottky contacts-Reference-Cited by-同舟云学术

Temperature behavior of inhomogeneous Pt∕GaN Schottky contacts

Published:2007-02-26 Issue:9 Volume:90 Page:092119
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Iucolano Ferdinando,Roccaforte Fabrizio,Giannazzo Filippo,Raineri Vito

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2710770

Reference13 articles.

1. Gallium Nitride Processing for Electronics, Sensors and Spintronics, edited by S. J. Pearton, C. R. Abernathy, and F. Ren (Springer-Verlag, London, 2006), pp. 1–16.

2. High barrier height GaN Schottky diodes: Pt/GaN and Pd/GaN

3. Effects of Interfacial Thin Metal Layer for High-Performance Pt–Au-Based Schottky Contacts to AlGaN–GaN

4. I-V characteristics of Au∕Ni Schottky diodes on GaN with SiNx nanonetwork

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