Study of electrical characteristics of high quality Pt SBDs fabricated on HVPE-Grown β-Ga2O3 epilayers in a wide temperature range (80–525 K)-Reference-Cited by-同舟云学术

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Study of electrical characteristics of high quality Pt SBDs fabricated on HVPE-Grown β-Ga2O3 epilayers in a wide temperature range (80–525 K)

Published:2023-10 Issue: Volume:165 Page:107606
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Sheoran Hardhyan^ORCID,Kaushik Janesh K.,Singh Rajendra

Funder

National Research Foundation of Korea

Indian Institute of Technology Delhi

Department of Physics, Harvard University

Council of Scientific and Industrial Research, India

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference93 articles.

1. A review on the GaN-on-Si power electronic devices;Zhong;Fundamental Research,2022

2. A comprehensive review on recent developments in ohmic and Schottky contacts on Ga2O3 for device applications;Sheoran;ACS Applied Electronic Materials,2022

3. Ultra-wide bandgap semiconductor Ga2O3 power diodes;Zhang;Nat. Commun.,2022

4. Recent advances in the growth of gallium oxide thin films employing various growth techniques—a review;Tak;J. Phys. Appl. Phys.,2021

5. Progress and challenges in the development of ultra-wide bandgap semiconductor α-Ga2O3 toward realizing power device applications;Oshima;Appl. Phys. Lett.,2022

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1. Impact of oxygen plasma power on the performance of Ga2O3 passivated GaN ultraviolet photodetectors;Applied Surface Science;2024-11

2. High-performance and low-power consumption deep UV photodetectors based on MOCVD-grown ZnGaO epilayers with high temperature functionality;Materials Science in Semiconductor Processing;2024-08

3. Low-temperature photoluminescence characteristic of Tm-doped Ga2O3 films for light emitting diodes application;Optical Materials;2024-04

4. Theoretical approach to thermal sensitivity capability of metal-semiconductor diodes with different Schottky contact area;Journal of Vacuum Science & Technology B;2023-09-26

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