Semipolar (11–22) AlN Films Grown by Hydride Vapor Phase Epitaxy for Schottky Barrier Diodes

Author:

Ji Jianli1ORCID,Liu Ting2ORCID,He Zhuokun1,Fang Chunlei2,Yan Xuejun1,Chen Minghao2,Shen Zhijie2,Sun Maosong2,Zhang Jicai123ORCID,Sun Wenhong145ORCID

Affiliation:

1. Research Center for Optoelectronic Materials and Devices, Third Generation Semiconductor Industry Research Institute, School of Physical Science and Technology, Guangxi University, Nanning 530004, China

2. College of Mathematics and Physics, Beijing University of Chemical Technology, Beijing 100029, China

3. State Key Laboratory of Chemical Resource Engineering, Beijing University of Chemical Technology, Beijing 100029, China

4. Guangxi Key Laboratory of Processing for Non-Ferrous Metal and Featured Materials, Guangxi University, Nanning 530004, China

5. Guangxi Key Laboratory for Relativistic Astrophysics, School of Physical Science & Technology, Guangxi University, Nanning 530004, China

Funder

Production Development of Epitaxial Wafers Grown by MOCVD

Disinfection Robot Based on High Power AlGaN-based UVLEDs

Guangxi University Foundation

the Natural Science Foundation of Guangxi

Publisher

American Chemical Society (ACS)

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