Semipolar (11–22) AlN Grown on m-Plane Sapphire by Flow-Rate Modulation Epitaxy for Vacuum-Ultraviolet Photodetection-Reference-Cited by-同舟云学术

Semipolar (11–22) AlN Grown on m-Plane Sapphire by Flow-Rate Modulation Epitaxy for Vacuum-Ultraviolet Photodetection

Published:2022-02-03 Issue:3 Volume:22 Page:1731-1737
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Yang Jiankun¹²³,Gao Yaqi¹²³,Zheng Wei⁴^ORCID,He Rui¹²³,Huo Ziqiang¹²³,Ji Xiaoli¹²³,Ran Junxue¹²³,Duan Ruifei¹²³,Wang Junxi¹²³,Li Jinmin¹²³,Wei Tongbo¹²³^ORCID

Affiliation:

1. State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

2. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

3. Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, Beijing 100083, China

4. State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials, Sun Yat-sen University, Guangzhou 510275, China

Funder

Ministry of Science and Technology of the People's Republic of China

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.1c01320

Reference38 articles.

1. 200nm deep ultraviolet photodetectors based on AlN

2. Hybrid AlN–SiC deep ultraviolet Schottky barrier photodetectors

3. Deep-ultraviolet integrated photonic and optoelectronic devices: A prospect of the hybridization of group III–nitrides, III–oxides, and two-dimensional materials

4. Surface Modification of AlN Using Organic Molecular Layer for Improved Deep UV Photodetector Performance

5. Characterization of AlN metal-semiconductor-metal diodes in the spectral range of 44–360nm: Photoemission assessments

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