GaN-Based HEMT-Type VUV Phototransistors With Superior Triple-Mode Photodetection-Reference-Cited by-同舟云学术

GaN-Based HEMT-Type VUV Phototransistors With Superior Triple-Mode Photodetection

Published:2024-05 Issue:5 Volume:45 Page:853-856
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Liang Fangzhou¹,Zhang Haochen¹^ORCID,Zhu Siqi²,Yang Lei¹^ORCID,Huang Zhe¹,Liang Kun¹,Xing Zhanyong¹,Wang Hu¹,Zhang Mingshuo¹^ORCID,Li Jiayao¹,Ye Yankai¹,Sun Haiding¹^ORCID

Affiliation:

1. IGaN Laboratory, School of Microelectronics, University of Science and Technology of China, Hefei, Anhui, China

2. State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials, Sun Yat-sen University, Shenzhen, China

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/55/10509537/10478925.pdf?arnumber=10478925

Reference39 articles.

1. Vacuum Ultraviolet (120–200 nm) Avalanche Photodetectors

2. Vacuum-Ultraviolet Photon Detections

3. Vacuum-ultraviolet photodetectors

4. Diamond detectors for LYRA, the solar VUV radiometer on board PROBA2

5. Compositionally graded III-nitride alloys: building blocks for efficient ultraviolet optoelectronics and power electronics

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Superior AlGaN/GaN‐Based Phototransistors and Arrays with Reconfigurable Triple‐Mode Functionalities Enabled by Voltage‐Programmed Two‐Dimensional Electron Gas for High‐Quality Imaging;Advanced Materials;2024-07-18