Abstract
Abstract
An aluminum nitride (AlN) quasi-vertical Schottky barrier diode (SBD) was fabricated on an AlN bulk substrate. An undoped AlN layer, a Si-doped Al0.9Ga0.1N current spreading layer and an AlN buffer layer were grown by plasma-enhanced molecular beam epitaxy. The epitaxial AlN layer was etched down to the n-Al0.9Ga0.1N layer to form an Ohmic contact. Ni/Au and V/Al/Ni/Au were deposited on the top AlN layer as Schottky contacts and on the exposed n-Al0.9Ga0.1N layer as Ohmic contacts, respectively. The Ohmic characteristics on the n-Al0.9Ga0.1N layer, capacitance–voltage (C–V) and current–voltage (I–V) characteristics of the AlN SBD were investigated.
Subject
General Physics and Astronomy,General Engineering
Cited by
13 articles.
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