Fabrication of vertical Schottky barrier diodes on n-type freestanding AlN substrates grown by hydride vapor phase epitaxy-Reference-Cited by-同舟云学术

Fabrication of vertical Schottky barrier diodes on n-type freestanding AlN substrates grown by hydride vapor phase epitaxy

Published:2015-05-29 Issue:6 Volume:8 Page:061003
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Kinoshita Toru,Nagashima Toru,Obata Toshiyuki,Takashima Shinya,Yamamoto Reo,Togashi Rie,Kumagai Yoshinao,Schlesser Raoul,Collazo Ramόn,Koukitu Akinori,Sitar Zlatko

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/8/i=6/a=061003/pdf

Reference23 articles.

1. Seeded growth of AlN single crystals by physical vapor transport

2. Growth of AlN single crystalline boules

3. Characterization of dislocation arrays in AlN single crystals grown by PVT

4. Surface preparation and homoepitaxial deposition of AlN on (0001)-oriented AlN substrates by metalorganic chemical vapor deposition

5. Growth and Characterization of AlN and AlGaN Epitaxial Films on AlN Single Crystal Substrates

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