Temperature dependence and current transport mechanisms in AlxGa1−xN Schottky rectifiers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.126791
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1. A review of junction field effect transistors for high-temperature and high-power electronics
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5. GaN: Processing, defects, and devices
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