Study on the charging current of surface traps in AlGaN/GaN high electron mobility transistors with a slot gate structure
Author:
Affiliation:
1. Institute of Microelectronics, Peking University, Beijing 100871, China
Funder
Suzhou Institute of Nanotechnology, Chinese Academy of Sciences
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5111494
Reference18 articles.
1. GaN HEMT reliability
2. Buffer Design to Minimize Current Collapse in GaN/AlGaN HFETs
3. Control of Buffer-Induced Current Collapse in AlGaN/GaN HEMTs Using SiNx Deposition
4. Surface-Related Drain Current Dispersion Effects in AlGaN–GaN HEMTs
5. The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
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2. Reliability, Applications and Challenges of GaN HEMT Technology for Modern Power Devices: A Review;Crystals;2022-11-07
3. Graphene-induced positive shift of the flat band voltage in recessed gate AlGaN/GaN structures;Applied Physics Letters;2021-04-26
4. Investigation on mechanisms of current saturation in gateless AlGaN/GaN heterostructure device;Japanese Journal of Applied Physics;2021-02-01
5. Influence of Al pre-deposition time on AlGaN/GaN heterostructures grown on sapphire substrate by metal organic chemical vapor deposition;Journal of Materials Science: Materials in Electronics;2020-07-25
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