Graphene-induced positive shift of the flat band voltage in recessed gate AlGaN/GaN structures-Reference-Cited by-同舟云学术

Graphene-induced positive shift of the flat band voltage in recessed gate AlGaN/GaN structures

Published:2021-04-26 Issue:17 Volume:118 Page:173504
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Liu Xiaobo¹²^ORCID,Zheng Li¹^ORCID,Cheng Xinhong¹²^ORCID,Shen Lingyan¹,Liu Shaoyu¹^ORCID,Wang Da¹,You Jinhao¹,Yu Yuehui¹²

Affiliation:

1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystems and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

2. The Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

Funder

Science and Technology Commission of Shanghai Municipality

Chinese Academy of Sciences Program

Chinees Academy of Sciences Program

Shanghai Sailing Program

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0038705

Reference28 articles.

1. Recessed 70-nm Gate-Length AlGaN/GaN HEMTs Fabricated Using an $\hbox{Al}_{2}\hbox{O}_{3}/\hbox{SiN}_{x}$ Dielectric Layer

2. Study on the charging current of surface traps in AlGaN/GaN high electron mobility transistors with a slot gate structure

3. Highly selective dry etching of III nitrides using an inductively coupled Cl[sub 2]/Ar/O[sub 2] plasma

4. High-power AlGaN∕InGaN∕AlGaN∕GaN recessed gate heterostructure field-effect transistors

5. High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment

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