Investigation of gate leakage current mechanism in AlGaN/GaN high-electron-mobility transistors with sputtered TiN
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4974959
Reference42 articles.
1. Silicon Dioxide-Encapsulated High-Voltage AlGaN/GaN HFETs for Power-Switching Applications
2. Very-high power density AlGaN/GaN HEMTs
3. Direct Current and Microwave Characteristics of Sub-micron AlGaN/GaN High-Electron-Mobility Transistors on 8-Inch Si(111) Substrate
4. Au-free CMOS-compatible AlGaN/GaN HEMT processing on 200 mm Si substrates
5. Carrier transport mechanism of AlGaN/GaN Schottky barrier diodes with various Al mole fractions
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