Direct Current and Microwave Characteristics of Sub-micron AlGaN/GaN High-Electron-Mobility Transistors on 8-Inch Si(111) Substrate-Reference-Cited by-同舟云学术

Direct Current and Microwave Characteristics of Sub-micron AlGaN/GaN High-Electron-Mobility Transistors on 8-Inch Si(111) Substrate

Published:2012-11-01 Issue:11R Volume:51 Page:111001
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Arulkumaran Subramaniam,Ng Geok Ing,Vicknesh Sahmuganathan,Wang Hong,Ang Kian Siong,Tan Joyce Pei Ying,Lin Vivian Kaixin,Todd Shane,Lo Guo-Qiang,Tripathy Sudhiranjan

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference17 articles.

1. Enhancement of breakdown voltage by AlN buffer layer thickness in AlGaN∕GaN high-electron-mobility transistors on 4in. diameter silicon

2. High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates

3. 20 mΩ, 750 V High-Power AlGaN/GaN Heterostructure Field-Effect Transistors on Si Substrate

4. A 97.8% Efficient GaN HEMT Boost Converter With 300-W Output Power at 1 MHz

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