Effect of threading dislocation in an AlN nucleation layer and vertical leakage current in an AlGaN/GaN high-electron mobility transistor structure on a silicon substrate
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://iopscience.iop.org/article/10.1088/1361-6641/aaeea5/pdf
Reference26 articles.
1. Structural and optical properties of AlxGa1−xN/GaN high electron mobility transistor structures grown on 200 mm diameter Si(111) substrates
2. AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111)
3. Direct Current and Microwave Characteristics of Sub-micron AlGaN/GaN High-Electron-Mobility Transistors on 8-Inch Si(111) Substrate
4. Uniform Growth of AlGaN/GaN High Electron Mobility Transistors on 200 mm Silicon (111) Substrate
5. Highly uniform AlGaN/GaN HEMT films grown on 200-mm silicon substrates by plasma molecular beam epitaxy
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1. Challenges in material processing and reliability issues in AlGaN/GaN HEMTs on silicon wafers for future RF power electronics & switching applications: A critical review;Materials Science in Semiconductor Processing;2022-11
2. The performance improvement of AlGaN/GaN heterojunction by using nano-patterned sapphire substrate;Materials Science in Semiconductor Processing;2022-06
3. Polarization-induced 2D hole gases in pseudomorphic undoped GaN/AlN heterostructures on single-crystal AlN substrates;Applied Physics Letters;2021-10-18
4. Proton irradiation effects on buffer-free gallium nitride on silicon carbide high electron mobility transistor-based radio frequency power amplifier;Semiconductor Science and Technology;2021-03-17
5. Investigation of AlGaN/GaN high electron mobility transistors on Silicon (111) substrates employing multi-stacked strained layer superlattice structures;Superlattices and Microstructures;2020-11
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