Investigation of AlGaN/GaN high electron mobility transistors on Silicon (111) substrates employing multi-stacked strained layer superlattice structures-Reference-Cited by-同舟云学术

Investigation of AlGaN/GaN high electron mobility transistors on Silicon (111) substrates employing multi-stacked strained layer superlattice structures

Published:2020-11 Issue: Volume:147 Page:106709
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Dalapati P.,Urata S.,Egawa T.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference48 articles.

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4. Investigation of AlGaN/GaN high electron mobility transistor structures on 200-mm silicon (111) substrates employing different buffer layer configurations;Lee;Sci. Rep.,2016

5. The roles of threading dislocations on electrical properties of AlGaN/GaN heterostructure grown by MBE;Wong;J. Electrochem. Soc.,2010

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