The Roles of Threading Dislocations on Electrical Properties of AlGaN/GaN Heterostructure Grown by MBE-Reference-Cited by-同舟云学术

The Roles of Threading Dislocations on Electrical Properties of AlGaN/GaN Heterostructure Grown by MBE

Published:2010 Issue:7 Volume:157 Page:H746
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Wong Yuen-Yee,Chang Edward Yi,Yang Tsung-Hsi,Chang Jet-Rung,Ku Jui-Tai,Hudait Mantu K.,Chou Wu-Ching,Chen Micheal,Lin Kung-Liang

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference23 articles.

1. High Off-state Breakdown Voltage 60-nm-Long-Gate AlGaN/GaN Heterostructure Field-Effect Transistors with AlGaN Back-Barrier

2. 2.1 A∕mm current density AlGaN∕GaN HEMT

3. Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors

4. Metalorganic Chemical Vapor Deposition and Material Characterization of Lattice-Matched InAlN/GaN Two-Dimensional Electron Gas Heterostructures

5. Electron scattering due to threading edge dislocations in n-type wurtzite GaN

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