Dislocation formation in the heteroepitaxial growth of PbSe/PbTe systems

Author:

Li YangORCID,Gu BoyangORCID,Diaz Adrian,Phillpot Simon R.ORCID,McDowell David L.,Chen Youping

Funder

National Science Foundation Division of Civil Mechanical and Manufacturing Innovation

National Science Foundation

National Science Foundation Division of Materials Research

Computer and Information Science and Engineering Office of Advanced Cyberinfrastructure

Publisher

Elsevier BV

Subject

Metals and Alloys,Polymers and Plastics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference76 articles.

1. The roles of threading dislocations on electrical properties of AlGaN/GaN heterostructure grown by MBE;Wong;J. Electrochem. Soc.,2010

2. Engineering of an insulating buffer and use of AlN interlayers: two optimisations for AlGaN–GaN HEMT-like structures;Bougrioua;Physica Status Solidi (a),2003

3. Murray, C. Department of Energy Basic Research Needs for Microelectronics, Report of the Office of Science Workshop on Basic Research Needs for Microelectronics (2018).

4. One-dimensional dislocations. II. Misfitting monolayers and oriented overgrowth;Frank;Proc. R. Soc. Lond. A,1949

5. One-dimensional dislocations. I. Static theory;Frank;Proc. R. Soc. Lond. A,1949

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1. Effects of misfit dislocations and dislocation mobility on thermal boundary resistance of PbTe/PbSe interfaces;Computational Materials Science;2024-02

2. Unifying temperature definition in atomistic and field representations of conservation laws;Proceedings of the Royal Society A: Mathematical, Physical and Engineering Sciences;2024-02

3. Dynamic interaction between phonons and edge dislocations in LiF;Journal of Applied Physics;2023-11-15

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