Uniform Growth of AlGaN/GaN High Electron Mobility Transistors on 200 mm Silicon (111) Substrate-Reference-Cited by-同舟云学术

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Uniform Growth of AlGaN/GaN High Electron Mobility Transistors on 200 mm Silicon (111) Substrate

Published:2013-02-01 Issue:2 Volume:6 Page:026501
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Christy Dennis,Egawa Takashi,Yano Yoshiki,Tokunaga Hiroki,Shimamura Hayato,Yamaoka Yuya,Ubukata Akinori,Tabuchi Toshiya,Matsumoto Koh

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/6/i=2/a=026501/pdf

Reference21 articles.

1. Improved DC and RF performance of AlGaN/GaN HEMTs grown by MOCVD on sapphire substrates

2. 12 W∕mm power density AlGaN∕GaN HEMTs on sapphire substrate

3. AlGaN/GaN Heterostructure Field-Effect Transistors on 4H-SiC Substrates with Current-Gain Cutoff Frequency of 190 GHz

4. High-Performance 0.1-$\mu\hbox{m}$ Gate AlGaN/GaN HEMTs on Silicon With Low-Noise Figure at 20 GHz

Cited by 94 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Epitaxial growth of high-quality GaN with a high growth rate at low temperatures by radical-enhanced metalorganic chemical vapor deposition;Scientific Reports;2024-05-13

2. Nonvolatile memory operations using intersubband transitions in GaN/AlN resonant tunneling diodes grown on Si(111) substrates;Journal of Applied Physics;2024-04-10

3. GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices;Semiconductor Science and Technology;2023-04-25

4. Challenges in material processing and reliability issues in AlGaN/GaN HEMTs on silicon wafers for future RF power electronics & switching applications: A critical review;Materials Science in Semiconductor Processing;2022-11

5. AlGaN/GaN HEMT on 3C-SiC/Low-Resistivity Si Substrate for Microwave Applications;IEICE Transactions on Electronics;2022-10-01

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