First-Principles Study on Structural Properties of GeO2and SiO2under Compression and Expansion Pressure
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference37 articles.
1. Evidence of low interface trap density in GeO2∕Ge metal-oxide-semiconductor structures fabricated by thermal oxidation
2. Origin of flatband voltage shift and unusual minority carrier generation in thermally grown GeO2/Ge metal-oxide-semiconductor devices
3. Ge dangling bonds at the (100)Ge/GeO2 interface and the viscoelastic properties of GeO2
4. First-Principles Study of Oxide Growth on Si(100) Surfaces and atSiO2/Si(100) Interfaces
5. First-principles study to obtain evidence of low interface defect density at Ge/GeO2 interfaces
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1. A first-principles investigation of interfacial properties and electronic structure of SiO2/Al interface;Computational Materials Science;2021-02
2. From Molecules and Clusters of Atoms to Solid State Properties;Many-body Approaches at Different Scales;2018
3. First-principles study on oxidation of Ge and its interface electronic structures;Japanese Journal of Applied Physics;2016-07-04
4. First-principles study of initial oxidation process of Ge(100) surfaces;Japanese Journal of Applied Physics;2016-06-10
5. Effect of atomic-arrangement matching on La2O3/Ge heterostructures for epitaxial high-k-gate-stacks;Journal of Applied Physics;2015-12-14
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