First-Principles Study of Oxide Growth on Si(100) Surfaces and atSiO2/Si(100) Interfaces
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.81.5936/fulltext
Reference35 articles.
1. High-Resolution X-Ray Photoelectron Spectroscopy as a Probe of Local Atomic Structure: Application to Amorphous SiO2and the Si-SiO2Interface
2. Microscopic structure of theSiO2/Si interface
3. Atomic and electronic structures of oxygen on Si(100) surfaces: Metastable adsorption sites
4. Monoatomic step observation on Si(111) surfaces by force microscopy in air
5. Growth mechanism of thin silicon oxide films on Si(100) studied by medium-energy ion scattering
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