First-principles study to obtain evidence of low interface defect density at Ge/GeO2 interfaces-Reference-Cited by-同舟云学术

First-principles study to obtain evidence of low interface defect density at Ge/GeO2 interfaces

Published:2009-07-06 Issue:1 Volume:95 Page:011908
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Saito Shoichiro,Hosoi Takuji,Watanabe Heiji,Ono Tomoya

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3168501

Reference27 articles.

1. Effect of Deuterium Anneal on SiO2/Si(100) Interface Traps and Electron Spin Resonance Signals of Ultrathin SiO2Films

2. Direct Evidence of GeO Volatilization from GeO2/Ge and Impact of Its Suppression on GeO2/Ge Metal–Insulator–Semiconductor Characteristics

3. C. H. Lee, T. Nishimura, K. Nagashio, K. Kita, and A. Toriumi, Extended Abstracts of Solid State Devices and Materials (The Japan Society of Applied Physics, Tsukuba, 2008), p. 16.

4. Evidence of low interface trap density in GeO2∕Ge metal-oxide-semiconductor structures fabricated by thermal oxidation

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