Effect of atomic-arrangement matching on La2O3/Ge heterostructures for epitaxial high-k-gate-stacks
Author:
Affiliation:
1. Graduate School of Engineering Science, Osaka University, Machkaneyama 1-3, Toyonaka, Osaka 560-8531, Japan
2. Tokyo City University, 1-28-1 Tamazutumi, Setagaya-ku, Tokyo 158-8557, Japan
Funder
Murata Science Foundation
Japan Society for the Promotion of Science (JSPS)
Japan Science and Technology Agency (JST)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4937147
Reference29 articles.
1. Evidence of low interface trap density in GeO2∕Ge metal-oxide-semiconductor structures fabricated by thermal oxidation
2. Interface-Controlled Self-Align Source/Drain Ge p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors Fabricated Using Thermally Oxidized GeO2Interfacial Layers
3. High-Performance $\hbox{GeO}_{2}/\hbox{Ge}$ nMOSFETs With Source/Drain Junctions Formed by Gas-Phase Doping
4. Enhancement of thermal stability and water resistance in yttrium-doped GeO2/Ge gate stack
5. Low-temperature fabrication of Y2O3/Ge gate stacks with ultrathin GeOx interlayer and low interface states density characterized by a reliable deep-level transient spectroscopy method
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1. A first-principles study of the structural and electronic properties of the epitaxial Ge(1 1 1)/La2O3(0 0 1) heterostructure;Journal of Physics D: Applied Physics;2019-07-08
2. Ternary Gd Y O high k oxide films for next-generation gate dielectrics and their annealing temperature effects;Ceramics International;2019-06
3. Integration of microwave-annealed oxidation on germanium metal-oxide-semiconductor devices;Journal of Vacuum Science & Technology B;2018-09
4. Atomic layer deposited HfO2 ultra-thin films on different crystallographic orientation Ge for CMOS applications;Thin Solid Films;2018-05
5. Electrical properties of epitaxial Lu- or Y-doped La 2 O 3 /La 2 O 3 /Ge high- k gate-stacks;Materials Science in Semiconductor Processing;2017-11
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