Enhancement of thermal stability and water resistance in yttrium-doped GeO2/Ge gate stack
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4868032
Reference23 articles.
1. Self-Aligned n-Channel Germanium MOSFETs With a Thin Ge Oxynitride Gate Dielectric and Tungsten Gate
2. Ge (100) and (111) N- and P-FETs With High Mobility and Low-$T$ Mobility Characterization
3. Material potential and scalability challenges of germanium CMOS
4. High-Mobility Ge N-MOSFETs and Mobility Degradation Mechanisms
5. 1-nm-thick EOT high mobility Ge n- and p-MOSFETs with ultrathin GeOx/Ge MOS interfaces fabricated by plasma post oxidation
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