A highly controllable doping technique via interdiffusion between epitaxial germanium layers and GaAs
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,General Physics and Astronomy,Condensed Matter Physics,Surfaces and Interfaces,General Chemistry
Reference58 articles.
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1. Preparation, properties and application of completely compensated Ge-on-GaAs films;Applied Physics A;2024-05-13
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