Integration of microwave-annealed oxidation on germanium metal-oxide-semiconductor devices-Reference-Cited by-同舟云学术

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Integration of microwave-annealed oxidation on germanium metal-oxide-semiconductor devices

Published:2018-09 Issue:5 Volume:36 Page:051204
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B
language:en
Short-container-title:Journal of Vacuum Science & Technology B

Author:

Hsu Chung-Chun¹,Chi Wei-Chun¹,Tsai Yi-He²,Tsai Ming-Li¹,Wang Shin-Yuan¹,Chou Chen-Han¹,Zhang Jun Lin¹,Luo Guang-Li³,Chien Chao-Hsin¹

Affiliation:

1. Department of Electronics Engineering, Institute of Electronics, National Chiao Tung University, Hsinchu 30010, Taiwan

2. Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan

3. National Nano Device Laboratories, Hsinchu 30078, Taiwan

Funder

National Science Council of Taiwan

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/pdf/10.1116/1.5051519

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices;RSC Advances;2019

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