Effect of Post-Deposition Annealing on the Interface Electronic Structures of Al2O3-Capped GaN and GaN/AlGaN/GaN Heterostructure
Author:
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Reference44 articles.
1. High-Performance Microwave Gate-Recessed AlGaN/AlN/GaN MOS-HEMT With 73% Power-Added Efficiency
2. Recessed Slant Gate AlGaN/GaN High Electron Mobility Transistors with 20.9 W/mm at 10 GHz
3. Atomic Layer Deposition of $\hbox{SiO}_{2}$ for AlGaN/GaN MOS-HFETs
4. Effects of SiN passivation by catalytic chemical vapor deposition on electrical properties of AlGaN∕GaN heterostructure field-effect transistors
5. Investigation of the interface between silicon nitride passivations and AlGaN/AlN/GaN heterostructures by C(V) characterization of metal-insulator-semiconductor-heterostructure capacitors
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1. Nanometer-Thick Insertion Layer for the Effective Passivation of Surface Traps and Improved Edge Acuity for AlGaN/GaN HEMTs;IEEE Transactions on Electron Devices;2023-10
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