Investigation of the interface between silicon nitride passivations and AlGaN/AlN/GaN heterostructures by C(V) characterization of metal-insulator-semiconductor-heterostructure capacitors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3428442
Reference23 articles.
1. The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs
2. Capacitance–voltage characterization of AlN/GaN metal–insulator–semiconductor structures grown on sapphire substrate by metalorganic chemical vapor deposition
3. High-quality oxide/nitride/oxide gate insulator for GaN MIS structures
4. Room temperature photo-CVD SiO2layers on AlGaN and AlGaN/GaN MOS-HFETs
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