Analysis of the Degradation of Depletion-Mode GaN High-Electron-Mobility Transistors Under Reverse Pulse Electrical Stress Using the Voltage-Transient Method-Reference-Cited by-同舟云学术

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Analysis of the Degradation of Depletion-Mode GaN High-Electron-Mobility Transistors Under Reverse Pulse Electrical Stress Using the Voltage-Transient Method

Published:2023-06 Issue:2 Volume:23 Page:257-262
ISSN:1530-4388
Container-title:IEEE Transactions on Device and Materials Reliability
language:
Short-container-title:IEEE Trans. Device Mater. Relib.

Author:

Lu Xiaozhuang¹^ORCID,Feng Shiwei¹^ORCID,Pan Shijie¹^ORCID,Li Xuan¹^ORCID,Bai Kun¹^ORCID,Zhu Hui¹^ORCID

Affiliation:

1. College of Microelectronics, Beijing University of Technology, Beijing, China

Funder

National Natural Science Foundation of China

Beijing Municipal Education Commission

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Safety, Risk, Reliability and Quality,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/7298/10145596/10065542.pdf?arnumber=10065542

Reference25 articles.

1. Gate Failure Behavior and Mechanism of AlGaN/GaN HEMTs Under Transmission Line Pulsed Stress

2. Stable AlGaN/GaN high electron mobility transistors with tungsten nitride gate metallisation

3. A New Differential Amplitude Spectrum for Analyzing the Trapping Effect in GaN HEMTs Based on the Drain Current Transient

4. A voltage-transient method for characterizing traps in GaN HEMTs

5. Correlation between DC and rf degradation due to deep levels in AlGaN/GaN HEMTs

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