Atomic Layer Deposition of $\hbox{SiO}_{2}$ for AlGaN/GaN MOS-HFETs-Reference-Cited by-同舟云学术

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Atomic Layer Deposition of $\hbox{SiO}_{2}$ for AlGaN/GaN MOS-HFETs

Published:2012-09 Issue:9 Volume:33 Page:1240-1242
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Kirkpatrick Casey J.,Lee Bongmook,Suri Rahul,Yang Xiangyu,Misra Veena

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/6276318/06244838.pdf?arnumber=6244838

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4. High wet-etch resistance SiO₂ films deposited by plasma-enhanced atomic layer deposition with 1,1,1-tris(dimethylamino)disilane;Journal of Vacuum Science & Technology A;2022-03

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