Low trap density of oxygen-rich HfO2/GaN interface for GaN MIS-HEMT applications

Author:

Cheng Wei-Chih12ORCID,He Jiaqi3ORCID,He Minghao4ORCID,Qiao Zepeng1,Jiang Yang1,Du Fangzhou1,Wang Xiang5,Hong Haimin5,Wang Qing1ORCID,Yu Hongyu167ORCID

Affiliation:

1. School of Microelectronics, Southern University of Science and Technology (SUSTech), Shenzhen 518000, China

2. Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology (HKUST), Kowloon, Hong Kong

3. Department of Electronic and Information Engineering, The Hong Kong Polytechnic University (PolyU), Kowloon, Hong Kong

4. Department of Electrical and Computer Engineering, National University of Singapore (NUS), 119077 Singapore

5. Shenzhen Smartchip Microelectronics Technology Co. Ltd., Shenzhen 518000, China

6. Engineering Research Center of Integrated Circuits for Next-Generation Communications, Ministry of Education, Shenzhen 518000, China

7. The Key Laboratory of the Third Generation Semi-conductor, Southern University of Science and Technology, Shenzhen 518000, China

Abstract

The high- k nature of HfO2 makes it a competitive gate oxide for various GaN-based power devices, but the high trap densities at the HfO2/GaN interface have hindered the application. This work was specifically carried out to explore the interface between GaN and ozone-based atomic-layer-deposited HfO2 gate oxide. Furthermore, the GaN surface is preoxidized before gate oxide deposition to prepare an oxygen-rich HfO2/GaN interface. On the preoxidized GaN surface, a sharper HfO2/GaN interface and amorphous HfO2 bulk form during the subsequent deposition, translating to improved electric performance in metal–insulator–semiconductor (MIS) devices. The ozone-based HfO2 shows a high breakdown electric field (∼7 MV/cm) and a high dielectric constant (∼28). Furthermore, the MIS high electron mobility transistors' negligible VTH hysteresis and parallel conductance measurements reflect the ultralow trap densities of the HfO2/GaN interface (<1012 cm−2 eV−1). Therefore, the proposed HfO2 gate oxide scheme offers a promising solution for developing GaN MIS devices.

Funder

Special Project for Research and Development in Key areas of Guangdong Province

Shenzhen Municipal Science and Technology Innovation Council

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

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