Nanometer-Thick Insertion Layer for the Effective Passivation of Surface Traps and Improved Edge Acuity for AlGaN/GaN HEMTs-Reference-Cited by-同舟云学术

Nanometer-Thick Insertion Layer for the Effective Passivation of Surface Traps and Improved Edge Acuity for AlGaN/GaN HEMTs

Published:2023-10 Issue:10 Volume:70 Page:5081-5086
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Odabasi Oguz¹^ORCID,Ghobadi Amir²^ORCID,Ghobadi Turkan Gamze Ulusoy³,Guneysu Efkan²,Urfali Emirhan²,Yaglioglu Gul⁴^ORCID,Butun Bayram²^ORCID,Ozbay Ekmel⁵^ORCID

Affiliation:

1. Department of Electrical and Electronics Engineering, Nanotechnology Research Center (NANOTAM), Bilkent University, Ankara, Turkey

2. Nanotechnology Research Center (NANOTAM), Bilkent University, Ankara, Turkey

3. UNAM-Institute of Materials Science and Nanotechnology and the Department of Physics, Bilkent University, Ankara, Turkey

4. Department of Engineering Physics, Ankara University, Ankara, Turkey

5. Department of Electrical and Electronics Engineering, Institute of Materials Science and Nanotechnology (UNAM), and the Department of Physics, Nanotechnology Research Center (NANOTAM), Bilkent University, Ankara, Turkey

Funder

Turkish Scientific and Technological Research Council (TUBITAK) through the 1501 Project GaNTURK

Turkcell Technology within the Framework of the 5G and Beyond Joint Graduate Support Program Coordinated

Information and Communication Technologies Authority

Türkiye Bilimler Akademisi

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10261402/10234454.pdf?arnumber=10234454

Reference32 articles.

1. Insulated gate and surface passivation structures for GaN-based power transistors

2. Impact of SiN capping during Ohmic Annealing on Performance of GaN-based MISHEMTs

3. GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric

4. A crystalline oxide passivation for Al2O3/AlGaN/GaN

5. Ti/Au/Al/Ni/Au low contact resistance and sharp edge acuity for highly scalable AlGaN/GaN HEMTs

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